Front. Nanotechnol.
Frontiers in Nanotechnology
Front. Nanotechnol.
2673-3013
Frontiers Media S.A.
1650174
10.3389/fnano.2025.1650174
Nanotechnology
Correction
Correction: Performance and variability analysis of ALD-grown wafer scale HfO2/Ta2O5-based memristive devices for neuromorphic computing
Kumar et al.
10.3389/fnano.2025.1650174
Kumar
Sanjay
1
2
*
Yadav
Deepika
1
Stathopoulos
Spyros
1
Prodromakis
Themis
1
*
1
School of Engineering, Centre for Electronics Frontiers, Integrated Micro and Nano Systems, The University of Edinburgh, Edinburgh, Scotland, United Kingdom
2
Department of Electronics Engineering, Indian Institute of Technology (ISM), Dhanbad, Jharkhand, India
Approved by: Frontiers Editorial Office, Frontiers Media SA, Switzerland
*Correspondence: Sanjay Kumar, sanjaysihag91@gmail.com; Themis Prodromakis, t.prodromakis@ed.ac.uk
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06
2025
2025
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Copyright © 2025 Kumar, Yadav, Stathopoulos and Prodromakis.
2025
Kumar, Yadav, Stathopoulos and Prodromakis
This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
A Correction on Performance and variability analysis of ALD-grown wafer scale HfO2/Ta2O5-based memristive devices for neuromorphic computing by Kumar S, Yadav D, Stathopoulos S and Prodromakis T (2025). Front. Nanotechnol. 7:1621554. doi: 10.3389/fnano.2025.1621554
memristive devices
oxide materials
performance matrix
atomic layer deposition
variability factor
device stability
section-at-acceptance
Nanodevices
Affiliations 1 and 2 were numbered incorrectly as 1Department of Electronics Engineering, Indian Institute of Technology (ISM), Dhanbad, Jharkhand, India, 2School of Engineering, Centre for Electronics Frontiers, Integrated Micro and Nano Systems, The University of Edinburgh, Edinburgh, Scotland, United Kingdom. The correct affiliations appear above. The original version of this article has been updated.
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