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<article article-type="brief-report" dtd-version="2.3" xml:lang="EN" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">
<front>
<journal-meta>
<journal-id journal-id-type="publisher-id">Front. Energy Res.</journal-id>
<journal-title>Frontiers in Energy Research</journal-title>
<abbrev-journal-title abbrev-type="pubmed">Front. Energy Res.</abbrev-journal-title>
<issn pub-type="epub">2296-598X</issn>
<publisher>
<publisher-name>Frontiers Media S.A.</publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id pub-id-type="publisher-id">870329</article-id>
<article-id pub-id-type="doi">10.3389/fenrg.2022.870329</article-id>
<article-categories>
<subj-group subj-group-type="heading">
<subject>Energy Research</subject>
<subj-group>
<subject>Brief Research Report</subject>
</subj-group>
</subj-group>
</article-categories>
<title-group>
<article-title>Supported SnS<sub>2</sub> Nanosheet Arrays on Ni Foam for Supercapacitors</article-title>
<alt-title alt-title-type="left-running-head">Sun et al.</alt-title>
<alt-title alt-title-type="right-running-head">Ni@SnS2 Exhibits a High-Peformance Supercapacitive Electrode Materials</alt-title>
</title-group>
<contrib-group>
<contrib contrib-type="author" corresp="yes">
<name>
<surname>Sun</surname>
<given-names>Haibin</given-names>
</name>
<xref ref-type="corresp" rid="c001">&#x2a;</xref>
<xref ref-type="fn" rid="fn1">
<sup>&#x2020;</sup>
</xref>
<uri xlink:href="https://loop.frontiersin.org/people/1666322/overview"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname>Liang</surname>
<given-names>Shuangshuang</given-names>
</name>
<xref ref-type="fn" rid="fn1">
<sup>&#x2020;</sup>
</xref>
<uri xlink:href="https://loop.frontiersin.org/people/1739450/overview"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname>Zheng</surname>
<given-names>Wenrui</given-names>
</name>
<uri xlink:href="https://loop.frontiersin.org/people/1739521/overview"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname>Liu</surname>
<given-names>Congcong</given-names>
</name>
<uri xlink:href="https://loop.frontiersin.org/people/1739414/overview"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname>Zhang</surname>
<given-names>Chao</given-names>
</name>
<uri xlink:href="https://loop.frontiersin.org/people/1739556/overview"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname>Ji</surname>
<given-names>Zhichao</given-names>
</name>
<uri xlink:href="https://loop.frontiersin.org/people/1739458/overview"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname>Liu</surname>
<given-names>Shenghong</given-names>
</name>
<uri xlink:href="https://loop.frontiersin.org/people/1739408/overview"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname>Xie</surname>
<given-names>Wenhe</given-names>
</name>
<uri xlink:href="https://loop.frontiersin.org/people/1739406/overview"/>
</contrib>
</contrib-group>
<aff>
<institution>Key Laboratory of Microelectronics and Energy of Henan Province</institution>, <institution>College of Physics and Electronic Engineering</institution>, <institution>Xinyang Normal University</institution>, <addr-line>Xinyang</addr-line>, <country>China</country>
</aff>
<author-notes>
<fn fn-type="edited-by">
<p>
<bold>Edited by:</bold> <ext-link ext-link-type="uri" xlink:href="https://loop.frontiersin.org/people/1552762/overview">Vivekanand Shukla</ext-link>, Chalmers University of Technology, Sweden</p>
</fn>
<fn fn-type="edited-by">
<p>
<bold>Reviewed by:</bold> <ext-link ext-link-type="uri" xlink:href="https://loop.frontiersin.org/people/548319/overview">Muhammad Sufyan Javed</ext-link>, Jinan University, China</p>
<p>
<ext-link ext-link-type="uri" xlink:href="https://loop.frontiersin.org/people/1588319/overview">Hai-Chao Chen</ext-link>, Qingdao University, China</p>
</fn>
<corresp id="c001">&#x2a;Correspondence: Haibin Sun, <email>sunhaibin@xynu.edu.cn</email>
</corresp>
<fn fn-type="equal" id="fn1">
<label>
<sup>&#x2020;</sup>
</label>
<p>These authors have contributed equally to this work</p>
</fn>
<fn fn-type="other">
<p>This article was submitted to Electrochemical Energy Conversion and Storage, a section of the journal Frontiers in Energy Research</p>
</fn>
</author-notes>
<pub-date pub-type="epub">
<day>26</day>
<month>04</month>
<year>2022</year>
</pub-date>
<pub-date pub-type="collection">
<year>2022</year>
</pub-date>
<volume>10</volume>
<elocation-id>870329</elocation-id>
<history>
<date date-type="received">
<day>06</day>
<month>02</month>
<year>2022</year>
</date>
<date date-type="accepted">
<day>21</day>
<month>03</month>
<year>2022</year>
</date>
</history>
<permissions>
<copyright-statement>Copyright &#xa9; 2022 Sun, Liang, Zheng, Liu, Zhang, Ji, Liu and Xie.</copyright-statement>
<copyright-year>2022</copyright-year>
<copyright-holder>Sun, Liang, Zheng, Liu, Zhang, Ji, Liu and Xie</copyright-holder>
<license xlink:href="http://creativecommons.org/licenses/by/4.0/">
<p>This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.</p>
</license>
</permissions>
<abstract>
<p>Layered metal sulfides are regarded as potential candidates for supercapacitive electrode materials due to the unique spatial dimensions for charge transport. Herein, self-supported SnS<sub>2</sub> nanosheet arrays on nickel (Ni) foam were successfully fabricated <italic>via</italic> a facile solvothermal approach. Interestingly, the continuous and high-density SnS<sub>2</sub> nanosheet arrays are interconnected to form porous Ni@SnS<sub>2</sub> electrode materials, which suppress the self-aggregation of SnS<sub>2</sub> and provide outstanding conductivity with 3D-networked Ni framework. The Ni@SnS<sub>2</sub> electrode demonstrates a high areal specific capacitance of 1965.56&#xa0;mF&#xa0;cm&#x2212;<sup>2</sup> at a current density of 1&#xa0;mA&#xa0;cm&#x2212;<sup>2</sup> and satisfactory cycling stability (78.3% capacity retention after 10,000 cycles). This self-supported porous structure provides a promising way to build advanced electrode material for supercapacitors.</p>
</abstract>
<kwd-group>
<kwd>SnS2 nanosheet arrays</kwd>
<kwd>crystal growth</kwd>
<kwd>self-supported</kwd>
<kwd>pseudocapacitors</kwd>
<kwd>energy storage and conversion</kwd>
</kwd-group>
<contract-num rid="cn001">11874317</contract-num>
<contract-sponsor id="cn001">National Natural Science Foundation of China<named-content content-type="fundref-id">10.13039/501100001809</named-content>
</contract-sponsor>
<contract-sponsor id="cn002">Nanhu Scholars Program for Young Scholars of Xinyang Normal University<named-content content-type="fundref-id">10.13039/501100012337</named-content>
</contract-sponsor>
</article-meta>
</front>
<body>
<sec id="s1">
<title>Introduction</title>
<p>Supercapacitors, due to their fast recharge rate, high power densities, and outstanding durability, have attracted considerable attention from scientists to industrialists (<xref ref-type="bibr" rid="B7">Javed et al., 2019</xref>; <xref ref-type="bibr" rid="B17">Zhang et al., 2019</xref>; <xref ref-type="bibr" rid="B6">Javed et al., 2020a</xref>; <xref ref-type="bibr" rid="B4">Fu et al., 2021</xref>). The energy storage mechanisms of supercapacitors can be divided into pseudocapacitors and electric double-layer capacitors. Among them, pseudocapacitors have attracted extensive interest because their Faradaic redox reaction can achieve a higher energy density than electric double-layer capacitors. In the past few years, transition metal oxides/hydroxides/sulfides including V<sub>2</sub>O<sub>5</sub> (<xref ref-type="bibr" rid="B5">Javed et al., 2020b</xref>), MnO<sub>2</sub> (<xref ref-type="bibr" rid="B1">Bai et al., 2018</xref>), Co.(OH)<sub>2</sub> (<xref ref-type="bibr" rid="B15">Wang et al., 2016</xref>), and Ni<sub>3</sub>S<sub>2</sub> (<xref ref-type="bibr" rid="B16">Xie et al., 2021</xref>), were mainly studied as pseudocapacitor electrode materials.</p>
<p>SnS<sub>2</sub>, has been used as a promising electrode material for batteries, photocatalysts and supercapacitors. For example, Cao et al<italic>.</italic> designed and synthesized a N,S-doped carbon/SnS<sub>2</sub> nanosheets hybrid as an anode material for potassium ion batteries (<xref ref-type="bibr" rid="B3">Cao et al., 2021</xref>), Sun et al<italic>.</italic> prepared a graphene/SnS<sub>2</sub> hybrid material to enhance absorption in the visible region (<xref ref-type="bibr" rid="B14">Sun et al., 2019</xref>), and, Parveen et al<italic>.</italic> reported flower-like SnS<sub>2</sub> with a high specific capacitance ( &#x223c; 431.82&#xa0;F&#xa0;g<sup>&#x2212;1</sup> at 1&#xa0;A&#xa0;g<sup>&#x2212;1</sup>) (<xref ref-type="bibr" rid="B12">Parveen et al., 2018</xref>). However, the agglomeration of 2D SnS<sub>2</sub> nanosheets seriously hinders the active sites and redox reaction as a supercapacitive electrode material over extended cycle.</p>
<p>Herein, we prepared self-supported SnS<sub>2</sub> nanosheet arrays on nickel foam (Ni@SnS<sub>2</sub>) by a simple solvothermal method. In this architecture, the porous SnS<sub>2</sub> nanosheet arrays provided the fast charge transfer passages, and the 3D-networked Ni foam improved the high conductivity of the material, endowing the outstanding electrochemical performance overall. The as-prepared Ni@SnS<sub>2</sub> electrode exhibited a high capacity of 1965.56&#xa0;mF&#xa0;cm<sup>&#x2212;2</sup> at 1&#xa0;mA&#xa0;cm<sup>&#x2212;2</sup> and a long cycling life (78.3% retention after 10,000 cycles at 20&#xa0;mA&#xa0;cm<sup>&#x2212;2</sup>).</p>
</sec>
<sec id="s2">
<title>Experimental</title>
<sec id="s2-1">
<title>Synthesis of the Ni@SnS<sub>2</sub> Nanosheet Arrays</title>
<p>The nickel (Ni) foam was cleaned with acetone, anhydrous ethanol, and deionized water. First, 0.701&#xa0;g of SnCl<sub>4</sub>.5H<sub>2</sub>O and 0.225&#xa0;g of thioacetamide (TAA) were added to 60&#xa0;ml of glycol and stirred for 20&#xa0;min to form a uniform solution. Then, the prepared solution and a piece of cleaned Ni foam were transferred to a 100&#xa0;ml lined Teflon stainless steel autoclave and maintained at 130&#xb0;C for 8&#xa0;h. Afterward, the sample was taken out, cleaned with anhydrous ethanol and deionized water, and then placed in the oven at 60&#xb0;C for 12&#xa0;h to obtain Ni@SnS<sub>2</sub> samples.</p>
</sec>
<sec id="s2-2">
<title>Characterization</title>
<p>The morphology was characterized by cold field emission scanning electron microscopy (SEM, Hitachi 4,800) and transmission electron microscopy (TEM, JEM 2100F). The phase structure of the sample was analyzed by X-ray Powder Diffractometer (XRD, Rigaku D/Max-2400 diffractometer) and micro-Raman spectroscopy (Jobin-Yvon LabRAM HR800 UV, YAG 532&#xa0;nm). The surface composition and chemical state of the sample are analyzed by X-ray photoelectron spectroscopy (XPS, K-ALPHA 0.5&#xa0;eV). The specific surface area was calculated by the Brunauer-Emmett-Teller (BET) method. The pore size distribution (PSD) was derived from the adsorption branches of isotherms by the Barrett-Joyner-Halenda (BJH) method.</p>
</sec>
<sec id="s2-3">
<title>Electrochemical Measurements</title>
<p>The electrochemical performance was measured using an electrochemical workstation (CHI660e). Ni@SnS<sub>2</sub> was directly used to test the electrochemical performance of three electrodes. Saturated calomel was used as the reference electrode, a platinum electrode was used as the counter electrode, Ni@SnS<sub>2</sub> (1 &#xd7; 1&#xa0;cm<sup>2</sup>) was used as the working electrode, and 2&#xa0;M KOH was used as the electrolyte. Ni@SnS<sub>2</sub> was tested by cyclic voltammetry (CV, sweep speed 5&#x2013;100&#xa0;mV&#xa0;s<sup>&#x2212;1</sup>) and constant current charge-discharge curves (GCD, current density 1&#x2013;100&#xa0;mA&#xa0;cm<sup>&#x2212;2</sup>). Electrochemical impedance spectroscopy (EIS) was performed at AC frequency of 0.01&#xa0;Hz&#x2013;100&#xa0;kHz and an amplitude of 5&#xa0;mV.</p>
</sec>
</sec>
<sec sec-type="results|discussion" id="s3">
<title>Results and Discussion</title>
<sec id="s3-1">
<title>Composition and Morphology Analysis</title>
<p>
<xref ref-type="fig" rid="F1">Figure 1A</xref>shows the XRD patterns of the Ni@SnS<sub>2</sub> nanosheet arrays. As is seen, the strong diffraction peaks centered at 44.5&#xb0;, 51.7&#xb0;, and 76.3&#xb0;, correspond to the (111), (200), and (220) crystalline facets of Ni foam (PDF&#x23;04-0850), respectively. Due to the weak peak intensity, the characteristic reflection at 28.1&#xb0; can be assigned to the (100) plane of SnS<sub>2</sub> (PDF&#x23;23-0677) (<xref ref-type="bibr" rid="B9">Li et al., 2018</xref>). In compared to the SnS<sub>2</sub> samples left from the Ni foam (<xref ref-type="sec" rid="s10">Supplementary Figure S1</xref>), the pure SnS<sub>2</sub> samples (<xref ref-type="sec" rid="s10">Supplementary Figure S2</xref>) exhibit the same diffraction peaks in the XRD patterns, confirming the existence of SnS<sub>2</sub> used as real active materials. Raman spectrum (<xref ref-type="fig" rid="F1">Figure 1B</xref>) proves the existence of SnS<sub>2</sub> on the surface of Ni foam with a high band at &#x223c; 305&#xa0;cm<sup>&#x2212;1</sup>, which is assigned to the A<sub>1g</sub> mode of SnS<sub>2</sub> (<xref ref-type="bibr" rid="B8">Jiang et al., 2013</xref>; <xref ref-type="bibr" rid="B13">Qu et al., 2014</xref>). Furthermore, <xref ref-type="sec" rid="s10">Supplementary Figure S3</xref> shows the XPS full survey spectrum, confirming the existence of Sn, Ni, and S elements. In the high-resolution narrow spectrum of S 2p (<xref ref-type="fig" rid="F1">Figure 1C</xref>), the two peaks located at 161.9 and 163.1&#xa0;eV respectively correspond to S 2p<sub>3/2</sub> and S 2p<sub>1/2</sub>, accompanying the satellite peak. The Sn 3d spectrum (<xref ref-type="fig" rid="F1">Figure 1D</xref>) contains two-orbit peaks at 487.1 and 495.4 eV, corresponding to Sn 3d<sub>3/2</sub> and Sn 2d<sub>5/2</sub>. The BET surface area and pore size distribution of Ni@SnS<sub>2</sub> were conducted by nitrogen isothermal adsorption/desorption measurement. The typical type IV isotherm curves (<xref ref-type="sec" rid="s10">Supplementary Figure S4A</xref>) exhibit the evident hysteresis loop and the according surface area is about 1.14&#xa0;m<sup>2</sup>&#x22c5;g<sup>&#x2212;1</sup>. The pore diameter (<xref ref-type="sec" rid="s10">Supplementary Figure S4B</xref>) is located at 2.17 and 10.97&#xa0;nm, indicating the existence of mesoporous structure.</p>
<fig id="F1" position="float">
<label>FIGURE 1</label>
<caption>
<p>
<bold>(A)</bold> XRD pattern of the Ni@SnS<sub>2</sub> nanosheet arrays; <bold>(B)</bold> Raman spectrum; XPS survey spectra of <bold>(C)</bold> S 2p and <bold>(D)</bold> Sn 3d.</p>
</caption>
<graphic xlink:href="fenrg-10-870329-g001.tif"/>
</fig>
<p>
<xref ref-type="fig" rid="F2">Figures 2A&#x2013;D</xref> display the morphological features of the Ni@SnS<sub>2</sub> nanosheet arrays by SEM. In the low-magnification SEM image (<xref ref-type="fig" rid="F2">Figure 2A</xref>), a homogeneous and complete SnS<sub>2</sub> nanosheet arrays coated the skeleton of the Ni foam. <xref ref-type="fig" rid="F2">Figures 2B&#x2013;D</xref> show the high-magnification SEM images, revealing that the vertically aligned SnS<sub>2</sub> nanosheets are highly packed on the Ni foam and are interconnected to form numerous porous structures. A single Ni@SnS<sub>2</sub> nanosheet array was further observed by TEM. <xref ref-type="fig" rid="F2">Figures 2E,I</xref> show images of the intersected SnS<sub>2</sub> nanosheet structures, which are consistent with the SEM analysis. From the high-resolution TEM (HRTEM) image, <xref ref-type="fig" rid="F2">Figures 2F,G</xref> shows a lattice fringe of 0.21&#xa0;nm, corresponding to the (102) plane of SnS<sub>2</sub>. The selected area electron diffraction (SAED) pattern is shown in <xref ref-type="fig" rid="F2">Figure 2H</xref>, implying that the polycrystalline rings can be indexed to the (101), (100) and (102) planes of SnS<sub>2</sub> (<xref ref-type="bibr" rid="B11">Liu et al., 2021</xref>). Furthermore, elemental mappings (<xref ref-type="fig" rid="F2">Figures 2I&#x2013;M</xref>) were measured to demonstrate the porous structure and homogeneous distribution of Sn, and S supported on Ni foam.</p>
<fig id="F2" position="float">
<label>FIGURE 2</label>
<caption>
<p>
<bold>(A&#x2013;D)</bold> SEM images at different magnifications of the Ni@SnS<sub>2</sub> nanosheet arrays; <bold>(E&#x2013;G)</bold> TEM images at different magnifications; <bold>(H)</bold> SAED pattern; <bold>(I&#x2013;M)</bold> Elemental mappings.</p>
</caption>
<graphic xlink:href="fenrg-10-870329-g002.tif"/>
</fig>
</sec>
<sec id="s3-2">
<title>Electrochemical Properties</title>
<p>
<xref ref-type="fig" rid="F3">Figure 3A</xref> shows a typical Ni@SnS<sub>2</sub> electrode with a pair of redox peaks at a scan rate of 5&#xa0;mV&#xa0;s<sup>&#x2212;1</sup>. With increasing scan rates, the shapes of these CV curves nearly retain their initial state when the scan rate is as high as 100&#xa0;mV&#xa0;s&#x2212;<sup>1</sup>. As shown in <xref ref-type="fig" rid="F3">Figure 3B</xref>, the GCD curves of the samples display almost symmetric shapes at all current densities from 1 to 100&#xa0;mA&#xa0;cm&#x2212;<sup>2</sup>, suggesting ideal pseudocapacitance properties (<xref ref-type="bibr" rid="B10">Li et al., 2021</xref>).</p>
<fig id="F3" position="float">
<label>FIGURE 3</label>
<caption>
<p>
<bold>(A)</bold> CV curves of the Ni@SnS<sub>2</sub> nanosheet arrays at different scan rates; <bold>(B)</bold> GCD curves; <bold>(C)</bold> Rate performance; <bold>(D)</bold> Cycle stability at 20&#xa0;mA&#xa0;cm&#x2212;<sup>2</sup> (inset: the lower left corner shows the GCD curves of the first 10 cycles, and the lower right corner shows the GCD curves of the last 10 cycles).</p>
</caption>
<graphic xlink:href="fenrg-10-870329-g003.tif"/>
</fig>
<p>When current density was increased from 1 to 100&#xa0;mA&#xa0;cm&#x2212;<sup>2</sup> (<xref ref-type="fig" rid="F3">Figure 3C</xref>), the specific capacitance decreased from 1965.56 to 733.78&#xa0;mF&#xa0;cm&#x2212;<sup>2</sup>. Furthermore, 75% of the initial specific capacitance was maintained even at a high current density of 20&#xa0;mA&#xa0;cm&#x2212;<sup>2</sup>. Here, the specific capacitances of bare Ni foam measured in <xref ref-type="sec" rid="s10">Supplementary Figure S5</xref> show much less than to the values of Ni@SnS<sub>2</sub> electrode, suggesting the ignorable influence. The following relationship (<xref ref-type="bibr" rid="B2">Bian et al., 2022</xref>) is established between the peak current i) and scan rate (<italic>v</italic>): <inline-formula id="inf1">
<mml:math id="m1">
<mml:mrow>
<mml:mi>i</mml:mi>
<mml:mo>&#x3d;</mml:mo>
<mml:mi>a</mml:mi>
<mml:msup>
<mml:mi>v</mml:mi>
<mml:mi>b</mml:mi>
</mml:msup>
</mml:mrow>
</mml:math>
</inline-formula>, where <italic>a</italic> and <italic>b</italic> are constants. As shown in <xref ref-type="sec" rid="s10">Supplementary Figure S6</xref>, the b-values of the anodic and cathodic peaks are 0.548 and 0.531, respectively, reflecting the diffusion-controlled behavior in the charge storage process. The cycle stability of the Ni@SnS<sub>2</sub> electrode shown in <xref ref-type="fig" rid="F3">Figure 3D</xref> was measured by the GCD method at a high current density of 20&#xa0;mA&#xa0;cm&#x2212;<sup>2</sup>. After 10,000 cycles, the capacitance retains 78.3% of its initial value, displaying its excellent application potential. Compared with the SEM images of the Ni@SnS<sub>2</sub> electrode after the long cycle (<xref ref-type="sec" rid="s10">Supplementary Figure S7</xref>), the nanosheet arrays were partly retained while the morphologies of Ni foam were dilapidated, decreasing the active site of the electrode material and causing the capacity decay after 10,000 cycling tests. According to the EIS Nyquist plots of the Ni@SnS<sub>2</sub> electrode (<xref ref-type="sec" rid="s10">Supplementary Figure S8</xref>), the real axis intercepts in the high-frequency region show a solution resistance (Rs) of about 1.0&#xa0;&#x3a9;. The quasi-semicircle arc in the high-to-medium-frequency region corresponds to the charge transfer resistance (R<sub>ct</sub>). Notably, the samples possessed a higher R<sub>ct</sub> (3.968&#xa0;&#x3a9;) compared with the initial R<sub>ct</sub> (0.85&#xa0;&#x3a9;) after a long cycle, indicating the increased electrochemical system resistance of the electrode material.</p>
</sec>
</sec>
<sec sec-type="conclusion" id="s4">
<title>Conclusion</title>
<p>Porous Ni@SnS<sub>2</sub> nanosheet arrays were successfully prepared by a facile solvothermal method using Ni foam as the 3D framework. Due to the unique structure and crystal composition, the Ni@SnS<sub>2</sub> electrode exhibited remarkable supercapacitive performance with high specific capacity and good cycling stability.</p>
</sec>
</body>
<back>
<sec id="s5">
<title>Data Availability Statement</title>
<p>The original contributions presented in the study are included in the article/<xref ref-type="sec" rid="s10">Supplementary Material</xref>, further inquiries can be directed to the corresponding author.</p>
</sec>
<sec id="s6">
<title>Author Contributions</title>
<p>HS: Conceptualization, Supervision SL: Data curation, Writing&#x2014;original draft WZ and CL: Data analysis CZ and ZJ: Visualization, Investigation SL: Methodology WX: review and editing.</p>
</sec>
<sec id="s7">
<title>Funding</title>
<p>This work was supported by the National Natural Science Foundation of China (11874317), Key Scientific Research Projects of Colleges and Universities in Henan Province (22A140009), XYNU Excellent MD Students Major Foundation (2021KYJJ07) and Nanhu Scholars Program for Young Scholar of XYNU. This work made use of instruments in analysis testing center of XYNU.</p>
</sec>
<sec sec-type="COI-statement" id="s8">
<title>Conflict of Interest</title>
<p>The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.</p>
</sec>
<sec sec-type="disclaimer" id="s9">
<title>Publisher&#x2019;s Note</title>
<p>All claims expressed in this article are solely those of the authors and do not necessarily represent those of their affiliated organizations, or those of the publisher, the editors and the reviewers. Any product that may be evaluated in this article, or claim that may be made by its manufacturer, is not guaranteed or endorsed by the publisher.</p>
</sec>
<sec id="s10">
<title>Supplementary Material</title>
<p>The Supplementary Material for this article can be found online at: <ext-link ext-link-type="uri" xlink:href="https://www.frontiersin.org/articles/10.3389/fenrg.2022.870329/full#supplementary-material">https://www.frontiersin.org/articles/10.3389/fenrg.2022.870329/full&#x23;supplementary-material</ext-link>
</p>
<supplementary-material xlink:href="DataSheet1.docx" id="SM1" mimetype="application/docx" xmlns:xlink="http://www.w3.org/1999/xlink"/>
</sec>
<ref-list>
<title>References</title>
<ref id="B1">
<citation citation-type="journal">
<person-group person-group-type="author">
<name>
<surname>Bai</surname>
<given-names>X.</given-names>
</name>
<name>
<surname>Tong</surname>
<given-names>X.</given-names>
</name>
<name>
<surname>Gao</surname>
<given-names>Y.</given-names>
</name>
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